Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device
SCIE
SCOPUS
- Title
- Excellent Threshold Selector Characteristics of Cu2S-based Atomic Switch Device
- Authors
- SEOKJAE, LIM; Woo, J.; Hwang, H.
- Date Issued
- 2017-08
- Publisher
- Electrochemical Society Inc.
- Abstract
- Bipolar-threshold switching was demonstrated using volatile-atomic switches (VAS) for cross-point selector applications. The VAS (Cu/Cu2S/W) exhibits asymmetric current?voltage (I?V) characteristics. An abrupt conductance change occurs by the formation of a Cu filament when a positive voltage is applied to the Cu electrode. Meanwhile, nonlinear I?V characteristics are observed because of the high concentration of vacancy of Cu under a negative voltage. We thus introduce the complementary-VAS configuration for the self-compliance characteristics at both polarities. Furthermore, the increased the switching voltage at a fast sweeping rate allows the VAS to show a strong immunity to electrical disturbance. ? 2017 The Electrochemical Society. All rights reserved.
- Keywords
- Asymmetric currents; Atomic switches; Electrical disturbances; Negative voltage; Positive voltage; Strong immunity; Switching voltages; Threshold switching
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50635
- DOI
- 10.1149/2.0081709jss
- ISSN
- 2162-8769
- Article Type
- Article
- Citation
- ECS Journal of Solid State Science and Technology, vol. 6, no. 9, page. P586 - P588, 2017-08
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