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Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
- Title
- Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress
- Date Issued
- 2012-10-01
- Publisher
- Microelectronics Reliability
- Article Type
- Conference
- Citation
- European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2012-10-01
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Related Researcher
- 강봉구KANG, BONG KOO
- Dept of Electrical Enginrg