Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
- Title
- Analysis of Parasitic Bottom Capacitance in n- and p-type Si-Nanowire Field Effect Transistors on Bulk
- Authors
- 백창기
- Date Issued
- 2011-08-17
- Publisher
- IEEE Nanotechnology Council
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/68461
- Article Type
- Conference
- Citation
- 2011 11th IEEE International Conference on Nanotechnology, 2011-08-17
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.