Full metadata record
DC Field | Value | Language |
dc.contributor.author | 정윤하 | - |
dc.date.accessioned | 2018-06-22T04:59:25Z | - |
dc.date.available | 2018-06-22T04:59:25Z | - |
dc.date.created | 2009-03-27 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/88167 | - |
dc.publisher | Austin , USA | - |
dc.relation.isPartOf | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
dc.relation.isPartOf | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
dc.title | Cryogenic RF Characteristics of HfO2-Gated nMOSFET | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.identifier.bibliographicCitation | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008), pp.6 | - |
dc.citation.conferenceDate | 2008-09-29 | - |
dc.citation.startPage | 6 | - |
dc.citation.title | 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008) | - |
dc.contributor.affiliatedAuthor | 정윤하 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
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