Cryogenic RF Characteristics of HfO2-Gated nMOSFET
- Title
- Cryogenic RF Characteristics of HfO2-Gated nMOSFET
- Authors
- 정윤하
- Publisher
- Austin , USA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/88167
- Article Type
- Conference
- Citation
- 5th International Symposium on Advanced Gate Stack Technology (ISAGST 2008), page. 6
- Files in This Item:
- There are no files associated with this item.
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