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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHU, KU | - |
| dc.contributor.author | GOOSSEN, KW | - |
| dc.contributor.author | KIM, SW | - |
| dc.contributor.author | KWON, OD | - |
| dc.contributor.author | LEE, SW | - |
| dc.contributor.author | PARK, S | - |
| dc.contributor.author | PEI, SS | - |
| dc.date.accessioned | 2015-06-25T01:03:24Z | - |
| dc.date.available | 2015-06-25T01:03:24Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 1994-06-06 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000008916 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9361 | - |
| dc.description.abstract | Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room-temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain-induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | INGAAS/GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY | - |
| dc.type | Article | - |
| dc.contributor.college | 전자전기공학과 | en_US |
| dc.identifier.doi | 10.1063/1.111348 | - |
| dc.author.google | CHU, KU | en_US |
| dc.author.google | GOOSSEN, KW | en_US |
| dc.author.google | PEI, SS | en_US |
| dc.author.google | PARK, S | en_US |
| dc.author.google | LEE, SW | en_US |
| dc.author.google | KWON, OD | en_US |
| dc.author.google | KIM, SW | en_US |
| dc.relation.volume | 64 | en_US |
| dc.relation.startpage | 3065 | en_US |
| dc.relation.lastpage | 3067 | en_US |
| dc.contributor.id | 10123978 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.64, no.23, pp.3065 - 3067 | - |
| dc.identifier.wosid | A1994NP75200001 | - |
| dc.citation.endPage | 3067 | - |
| dc.citation.number | 23 | - |
| dc.citation.startPage | 3065 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 64 | - |
| dc.contributor.affiliatedAuthor | KWON, OD | - |
| dc.identifier.scopusid | 2-s2.0-0028766467 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 4 | - |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | MODULATORS | - |
| dc.subject.keywordPlus | GAAS | - |
| dc.subject.keywordPlus | ELECTROABSORPTION | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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