INGAAS/GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
SCIE
SCOPUS
- Title
- INGAAS/GAAS SHALLOW QUANTUM-WELL OPTICAL SWITCHES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
- Authors
- CHU, KU; GOOSSEN, KW; KIM, SW; KWON, OD; LEE, SW; PARK, S; PEI, SS
- Date Issued
- 1994-06-06
- Publisher
- AMER INST PHYSICS
- Abstract
- Optical switches have been fabricated from InGaAs/GaAs shallow quantum well structures grown by metalorganic vapor phase epitaxy. The photocurrent spectra exhibited very sharp room-temperature exciton peaks around 900 nm. Quantum well modulators consisting of such a shallow system showed contrast ratios larger than 2:1 and no sign of strain-induced degradations. The epitaxial quality, however, had some interesting dependence on the choice of substrate dopant.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9361
- DOI
- 10.1063/1.111348
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 64, no. 23, page. 3065 - 3067, 1994-06-06
- Files in This Item:
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