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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jang, HW | - |
| dc.contributor.author | Urbanek, W | - |
| dc.contributor.author | Yoo, MC | - |
| dc.contributor.author | Lee, JL | - |
| dc.date.accessioned | 2015-06-25T01:08:05Z | - |
| dc.date.available | 2015-06-25T01:08:05Z | - |
| dc.date.created | 2009-02-28 | - |
| dc.date.issued | 2002-04-22 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000002580 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9432 | - |
| dc.description.abstract | We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O-2 atmosphere. A low resistivity of 4.5x10(-5) Omega cm(2) and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Angstrom)/Ni (50 Angstrom) contact. The RuO2 formed on p-type GaN played a role in reducing the effective Schottky barrier height for injection of holes and NiO layer produced on the RuO2 acted as a diffusion barrier for the outdiffusion of released Ga and N atoms, resulting in the reduction of the contact resistivity as well as the enhancement of light transmission. (C) 2002 American Institute of Physics. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.1474609 | - |
| dc.author.google | Jang, HW | en_US |
| dc.author.google | Urbanek, W | en_US |
| dc.author.google | Lee, JL | en_US |
| dc.author.google | Yoo, MC | en_US |
| dc.relation.volume | 80 | en_US |
| dc.relation.issue | 16 | en_US |
| dc.relation.startpage | 2937 | en_US |
| dc.relation.lastpage | 2939 | en_US |
| dc.contributor.id | 10105416 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.80, no.16, pp.2937 - 2939 | - |
| dc.identifier.wosid | 000175068900040 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.endPage | 2939 | - |
| dc.citation.number | 16 | - |
| dc.citation.startPage | 2937 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 80 | - |
| dc.contributor.affiliatedAuthor | Lee, JL | - |
| dc.identifier.scopusid | 2-s2.0-79956011409 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 27 | - |
| dc.description.scptc | 31 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 이종람LEE, JONG LAM
- Dept of Materials Science & Enginrg