Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN
SCIE
SCOPUS
- Title
- Low-resistant and high-transparent Ru/Ni ohmic contact on p-type GaN
- Authors
- Jang, HW; Urbanek, W; Yoo, MC; Lee, JL
- Date Issued
- 2002-04-22
- Publisher
- AMER INST PHYSICS
- Abstract
- We report a low-resistant and high-transparent Ru-based ohmic contact on p-type GaN through oxidation annealing under O-2 atmosphere. A low resistivity of 4.5x10(-5) Omega cm(2) and high light transmittance (84.6%) were simultaneously obtained from oxidized Ru (50 Angstrom)/Ni (50 Angstrom) contact. The RuO2 formed on p-type GaN played a role in reducing the effective Schottky barrier height for injection of holes and NiO layer produced on the RuO2 acted as a diffusion barrier for the outdiffusion of released Ga and N atoms, resulting in the reduction of the contact resistivity as well as the enhancement of light transmission. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9432
- DOI
- 10.1063/1.1474609
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 80, no. 16, page. 2937 - 2939, 2002-04-22
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