Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
SCIE
SCOPUS
- Title
- Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems
- Authors
- Lim, Seokjae; Sung, Changhyuck; Kim, Hyungjun; Kim, Taesu; Song, Jeonghwan; Kim, Jae-Joon; Hwang, Hyunsang
- Date Issued
- 2018-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, we demonstrate the conductive-bridging RAM (CBRAM) with excellent multi-level cell (MLC) and linear conductance characteristics for an artificial synaptic device of neuromorphic systems. Our findings show that inherent characteristics of CBRAM can achieve the linear conductance and MLC characteristics as a product of an integer unit of the conductance. However, uncontrolled metal-ion injection into the switching layer results in a significant degradation of device uniformity, leading to degradation in the classification accuracy. Thus, we introduce a multi-layer CBRAM configuration (Cu/HfO2/Ta/Cu2S/W) to control the ionic motion in electrolytes. As a result of device engineering, highly improved classification accuracy is achieved using CIFAR-10 data set.
- Keywords
- Metal ions; Metals; Classification accuracy; Conductive-bridging RAM (CBRAM); Device engineering; Inherent characteristics; Ion injection; Multi level cell (MLC); Neuromorphic systems; synaptic device; Classification (of information)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/94607
- DOI
- 10.1109/LED.2018.2789425
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 39, no. 2, page. 312 - 315, 2018-02
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- There are no files associated with this item.
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