Effect of thin iridium oxide on the formation of interface dipole in organic light-emitting diodes
SCIE
SCOPUS
- Title
- Effect of thin iridium oxide on the formation of interface dipole in organic light-emitting diodes
- Authors
- Kim, SY; Lee, JL
- Date Issued
- 2005-12-05
- Publisher
- AMER INST PHYSICS
- Abstract
- The 4,4'-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl was in situ deposited on both iridium-oxide-coated indium-tin-oxide (IrOx-ITO) and O-2-plasma-treated ITO (O-2-ITO), and their interface dipole energies were quantitatively determined using synchrotron radiation photoemission spectroscopy. The dipole energies of both O-2-ITO and IrOx-ITO were same with each other, -0.3 eV, meaning the formation of same amount of interface dipole. The secondary electron emission spectra revealed that the work function of IrOx-ITO is higher by 0.5 eV than that of O-2-ITO, resulting in the decrease of the turn-on voltage via reduction of hole injection barrier. (c) 2005 Americian Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9489
- DOI
- 10.1063/1.2135874
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 87, no. 23, 2005-12-05
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