DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, HW | - |
dc.contributor.author | Kim, SY | - |
dc.contributor.author | Kim, WK | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:11:52Z | - |
dc.date.available | 2015-06-25T01:11:52Z | - |
dc.date.created | 2009-02-28 | - |
dc.date.issued | 2005-08-22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000005342 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9491 | - |
dc.description.abstract | We report the enhancement of the electron injection by inserting a 1-nm-thick magnesium oxide (MgO) buffer layer between Al cathode and tris (8-hydroxyquinoline) aluminum in an inverted top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 10 to 6 V and the luminance increased about 61% as the MgO interfacial layer was employed. The MgO interfacial layer played a role in reducing the energy barrier of electron injection, leading to the reduction of the turn-on voltage and the enhancement of luminance. (c) 2005 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2033129 | - |
dc.author.google | Choi, HW | en_US |
dc.author.google | Kim, SY | en_US |
dc.author.google | Lee, JL | en_US |
dc.author.google | Kim, WK | en_US |
dc.relation.volume | 87 | en_US |
dc.relation.issue | 8 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.87, no.8 | - |
dc.identifier.wosid | 000231310700027 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 8 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 87 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-24344494913 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 77 | - |
dc.description.scptc | 77 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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