Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer
SCIE
SCOPUS
- Title
- Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer
- Authors
- Choi, HW; Kim, SY; Kim, WK; Lee, JL
- Date Issued
- 2005-08-22
- Publisher
- AMER INST PHYSICS
- Abstract
- We report the enhancement of the electron injection by inserting a 1-nm-thick magnesium oxide (MgO) buffer layer between Al cathode and tris (8-hydroxyquinoline) aluminum in an inverted top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 10 to 6 V and the luminance increased about 61% as the MgO interfacial layer was employed. The MgO interfacial layer played a role in reducing the energy barrier of electron injection, leading to the reduction of the turn-on voltage and the enhancement of luminance. (c) 2005 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9491
- DOI
- 10.1063/1.2033129
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 87, no. 8, 2005-08-22
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