DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Gessmann, T | - |
dc.contributor.author | Schubert, EF | - |
dc.contributor.author | Xi, JQ | - |
dc.contributor.author | Luo, H | - |
dc.contributor.author | Cho, J | - |
dc.contributor.author | Sone, C | - |
dc.contributor.author | Park, Y | - |
dc.date.accessioned | 2015-06-25T01:12:58Z | - |
dc.date.available | 2015-06-25T01:12:58Z | - |
dc.date.created | 2009-09-07 | - |
dc.date.issued | 2006-01-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000018796 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9509 | - |
dc.description.abstract | Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer. (c) 2006 American Institute of Physics. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2159097 | - |
dc.author.google | Kim, JK | en_US |
dc.author.google | Gessmann, T | en_US |
dc.author.google | Park, Y | en_US |
dc.author.google | Sone, C | en_US |
dc.author.google | Cho, J | en_US |
dc.author.google | Luo, H | en_US |
dc.author.google | Xi, JQ | en_US |
dc.author.google | Schubert, EF | en_US |
dc.relation.volume | 88 | en_US |
dc.relation.issue | 1 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.88, no.1 | - |
dc.identifier.wosid | 000234428100080 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 88 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-33645533436 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 111 | - |
dc.description.scptc | 117 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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