GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
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- Title
- GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer
- Authors
- Kim, JK; Gessmann, T; Schubert, EF; Xi, JQ; Luo, H; Cho, J; Sone, C; Park, Y
- Date Issued
- 2006-01-02
- Publisher
- AMER INST PHYSICS
- Abstract
- Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461 nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN/low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9509
- DOI
- 10.1063/1.2159097
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 88, no. 1, 2006-01-02
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