DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, YS | - |
dc.contributor.author | Kang, K | - |
dc.contributor.author | Jo, MH | - |
dc.contributor.author | Jeon, JM | - |
dc.contributor.author | Kim, M | - |
dc.date.accessioned | 2015-06-25T01:17:04Z | - |
dc.date.available | 2015-06-25T01:17:04Z | - |
dc.date.created | 2009-08-20 | - |
dc.date.issued | 2007-11-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000007339 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9572 | - |
dc.description.abstract | We report solid-phase epitaxy of amorphous Si (a-Si) shells using crystalline Si (c-Si) nanowire cores as seed templates. The c-Si core/a-Si shell nanowire heterostructures were in situ synthesized via a two-step chemical vapor deposition: the Au-catalytic decomposition of SiH4 for the core c-Si nanowires and the subsequent homogeneous decomposition of SiH4 at higher temperatures for the a-Si shells. Upon thermal annealing above 600 degrees C, the a-Si shells crystallize into c-Si shells from c-Si core nanowires in an epitaxial fashion. We discuss the crystallization kinetics of a-Si shells within the frame of Gibbs-Thomson effects arising from the finite size of nanowire seeds. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.2817601 | - |
dc.author.google | Woo, YS | en_US |
dc.author.google | Kang, K | en_US |
dc.author.google | Kim, M | en_US |
dc.author.google | Jeon, JM | en_US |
dc.author.google | Jo, MH | en_US |
dc.relation.volume | 91 | en_US |
dc.relation.issue | 22 | en_US |
dc.contributor.id | 10176415 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.91, no.22 | - |
dc.identifier.wosid | 000251324600073 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 22 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 91 | - |
dc.contributor.affiliatedAuthor | Jo, MH | - |
dc.identifier.scopusid | 2-s2.0-36549038979 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.description.scptc | 11 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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