DC Field | Value | Language |
---|---|---|
dc.contributor.author | Argunova, T.S. | - |
dc.contributor.author | Gutkin, M.Y. | - |
dc.contributor.author | Shcherbachev, K.D. | - |
dc.contributor.author | Nagalyuk, S.S. | - |
dc.contributor.author | Kazarova, O.P. | - |
dc.contributor.author | Mokhov, E.N. | - |
dc.contributor.author | Je, J.H. | - |
dc.date.accessioned | 2019-04-07T18:57:13Z | - |
dc.date.available | 2019-04-07T18:57:13Z | - |
dc.date.created | 2019-02-26 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 0255-5476 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/96132 | - |
dc.description.abstract | AlN single crystals were prevented from cracking by simultaneous growth and evaporation of SiC substrates. Freestanding layers (��1 mm thick) were proved continuous (non?cracked) and used as a model system to investigate the type of dislocation structure near AlN/SiC interface. Using x-ray diffraction techniques, we found that, unlike GaN films, in which high-density threading dislocations cross the film along its normal, the AlN layers possess a mosaic structure composed of low-angle subgrain boundaries. We suggest a theoretical model that describes the misfit stress relaxation in growing AlN crystal. ? 2017 Trans Tech Publications, Switzerland. | - |
dc.language | English | - |
dc.publisher | Trans Tech Publications Ltd | - |
dc.relation.isPartOf | Materials Science Forum | - |
dc.title | Thermal and lattice misfit stress relaxation in growing AIN crystal with simultaneous evaporation of SiC substrate | - |
dc.type | Article | - |
dc.identifier.doi | 10.4028/www.scientific.net/MSF.897.711 | - |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Materials Science Forum, v.897 MSF, pp.711 - 714 | - |
dc.citation.endPage | 714 | - |
dc.citation.startPage | 711 | - |
dc.citation.title | Materials Science Forum | - |
dc.citation.volume | 897 MSF | - |
dc.contributor.affiliatedAuthor | Argunova, T.S. | - |
dc.contributor.affiliatedAuthor | Je, J.H. | - |
dc.identifier.scopusid | 2-s2.0-85020021852 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.type.docType | Conference Paper | - |
dc.subject.keywordAuthor | AlN | - |
dc.subject.keywordAuthor | Crystal structure | - |
dc.subject.keywordAuthor | Defects | - |
dc.subject.keywordAuthor | Synchrotron radiation | - |
dc.subject.keywordAuthor | X-ray imaging | - |
dc.subject.keywordAuthor | X-ray scattering | - |
dc.description.journalRegisteredClass | scopus | - |
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