Thermal and lattice misfit stress relaxation in growing AIN crystal with simultaneous evaporation of SiC substrate
SCOPUS
- Title
- Thermal and lattice misfit stress relaxation in growing AIN crystal with simultaneous evaporation of SiC substrate
- Authors
- Argunova, T.S.; Gutkin, M.Y.; Shcherbachev, K.D.; Nagalyuk, S.S.; Kazarova, O.P.; Mokhov, E.N.; Je, J.H.
- Date Issued
- 2017-05
- Publisher
- Trans Tech Publications Ltd
- Abstract
- AlN single crystals were prevented from cracking by simultaneous growth and evaporation of SiC substrates. Freestanding layers (��1 mm thick) were proved continuous (non?cracked) and used as a model system to investigate the type of dislocation structure near AlN/SiC interface. Using x-ray diffraction techniques, we found that, unlike GaN films, in which high-density threading dislocations cross the film along its normal, the AlN layers possess a mosaic structure composed of low-angle subgrain boundaries. We suggest a theoretical model that describes the misfit stress relaxation in growing AlN crystal. ? 2017 Trans Tech Publications, Switzerland.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/96132
- DOI
- 10.4028/www.scientific.net/MSF.897.711
- ISSN
- 0255-5476
- Article Type
- Article
- Citation
- Materials Science Forum, vol. 897 MSF, page. 711 - 714, 2017-05
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- There are no files associated with this item.
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