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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chen, KX | - |
| dc.contributor.author | Dai, Q | - |
| dc.contributor.author | Lee, W | - |
| dc.contributor.author | Kim, JK | - |
| dc.contributor.author | Schubert, EF | - |
| dc.contributor.author | Gr | - |
| dc.contributor.author | usky, J | - |
| dc.contributor.author | Mendrick, M | - |
| dc.contributor.author | Li, X | - |
| dc.contributor.author | Smart, JA | - |
| dc.date.accessioned | 2015-06-25T01:19:55Z | - |
| dc.date.available | 2015-06-25T01:19:55Z | - |
| dc.date.created | 2009-09-04 | - |
| dc.date.issued | 2008-11-10 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000018672 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9613 | - |
| dc.description.abstract | The effect of edge and screw dislocations on the electrical and optical properties of n-type Al0.34Ga0.66N is investigated. It is found that edge dislocations strongly affect the electrical properties of n-type Al0.34Ga0.66N. Both free carrier concentration and mobility decrease with increasing edge dislocation density. Edge dislocations also enhance nonradiative recombination, which is indicated by decreasing near-band-edge UV as well as parasitic blue photoluminescence. The UV/blue ratio is found to be independent of the edge dislocation density but strongly depends on the Si doping concentration. | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3021076 | - |
| dc.author.google | Chen, KX | en_US |
| dc.author.google | Dai, Q | en_US |
| dc.author.google | Smart, JA | en_US |
| dc.author.google | Li, X | en_US |
| dc.author.google | Mendrick, M | en_US |
| dc.author.google | Grandusky, J | en_US |
| dc.author.google | Schubert, EF | en_US |
| dc.author.google | Kim, JK | en_US |
| dc.author.google | Lee, W | en_US |
| dc.relation.volume | 93 | en_US |
| dc.relation.issue | 19 | en_US |
| dc.contributor.id | 10100864 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.19 | - |
| dc.identifier.wosid | 000260944100050 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 19 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 93 | - |
| dc.contributor.affiliatedAuthor | Kim, JK | - |
| dc.identifier.scopusid | 2-s2.0-56249125264 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 34 | - |
| dc.description.scptc | 40 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | THREADING DISLOCATIONS | - |
| dc.subject.keywordPlus | EDGE DISLOCATIONS | - |
| dc.subject.keywordPlus | EPITAXIAL GAN | - |
| dc.subject.keywordPlus | CATHODOLUMINESCENCE | - |
| dc.subject.keywordPlus | SCATTERING | - |
| dc.subject.keywordPlus | LAYERS | - |
| dc.subject.keywordAuthor | aluminium compounds | - |
| dc.subject.keywordAuthor | carrier density | - |
| dc.subject.keywordAuthor | carrier mobility | - |
| dc.subject.keywordAuthor | dislocation density | - |
| dc.subject.keywordAuthor | doping profiles | - |
| dc.subject.keywordAuthor | edge dislocations | - |
| dc.subject.keywordAuthor | gallium compounds | - |
| dc.subject.keywordAuthor | III-V semiconductors | - |
| dc.subject.keywordAuthor | photoluminescence | - |
| dc.subject.keywordAuthor | screw dislocations | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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Related Researcher
- 김종규KIM, JONG KYU
- Dept of Materials Science & Enginrg