Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N
SCIE
SCOPUS
- Title
- Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N
- Authors
- Chen, KX; Dai, Q; Lee, W; Kim, JK; Schubert, EF; Gr; usky, J; Mendrick, M; Li, X; Smart, JA
- Date Issued
- 2008-11-10
- Publisher
- AMER INST PHYSICS
- Abstract
- The effect of edge and screw dislocations on the electrical and optical properties of n-type Al0.34Ga0.66N is investigated. It is found that edge dislocations strongly affect the electrical properties of n-type Al0.34Ga0.66N. Both free carrier concentration and mobility decrease with increasing edge dislocation density. Edge dislocations also enhance nonradiative recombination, which is indicated by decreasing near-band-edge UV as well as parasitic blue photoluminescence. The UV/blue ratio is found to be independent of the edge dislocation density but strongly depends on the Si doping concentration.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9613
- DOI
- 10.1063/1.3021076
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 93, no. 19, 2008-11-10
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