Thin-film passivation by atomic layer deposition for organic field-effect transistors
SCIE
SCOPUS
- Title
- Thin-film passivation by atomic layer deposition for organic field-effect transistors
- Authors
- Jeon, H; Shin, K; Yang, C; Park, CE; Park, SHK
- Date Issued
- 2008-10-20
- Publisher
- AMER INST PHYSICS
- Abstract
- The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 degrees C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m(2)/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000017].
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9622
- DOI
- 10.1063/1.3000017
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 93, no. 16, 2008-10-20
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