High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique
SCIE
SCOPUS
- Title
- High-performance solution-processed triisopropylsilylethynyl pentacene transistors and inverters fabricated by using the selective self-organization technique
- Authors
- Kim, SH; Choi, D; Chung, DS; Yang, C; Jang, J; Park, CE; Park, SHK
- Date Issued
- 2008-09-15
- Publisher
- AMER INST PHYSICS
- Abstract
- To obtain selectively self-organized active layers of organic field-effect transistors (OFETs) and inverters from a solution-phased triisopropylsilylethynyl pentacene (TIPS-PEN) semiconductor, we locally patterned an oxide dielectric, covered with a hydrophobic fluoropolymer, using O-2 plasma etching. Drop-cast TIPS-PEN molecules were selectively crystallized on the O-2-plasma-etched area, where a hydrophilic oxide surface was produced. Modification of the patterned oxide dielectrics with hexamethyldisilazane led to a field-effect mobility of the TIPS-PEN OFETs of 0.185 cm(2) V-1 s(-1), a substhreshold swing of 0.738 V/decade and an on/off ratio of 10(7). Moreover, an inverter composed of two of these OFETs showed good device operation and inverter gain of 5.6. (c) 2008 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9625
- DOI
- 10.1063/1.2987419
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 93, no. 11, 2008-09-15
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