DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, JA | - |
dc.contributor.author | Park, SH | - |
dc.contributor.author | Baek, JH | - |
dc.contributor.author | Ko, YD | - |
dc.contributor.author | Lee, HS | - |
dc.contributor.author | Cho, K | - |
dc.contributor.author | Lee, JY | - |
dc.contributor.author | Lee, DR | - |
dc.contributor.author | Cho, JH | - |
dc.date.accessioned | 2015-06-25T01:22:19Z | - |
dc.date.available | 2015-06-25T01:22:19Z | - |
dc.date.created | 2010-05-06 | - |
dc.date.issued | 2009-12-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000020964 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9651 | - |
dc.description.abstract | We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (similar to 10(3) S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm(2)/Vs and an ON/OFF current ratio of 10(7) were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT: PSS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273862] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors | - |
dc.type | Article | - |
dc.contributor.college | 화학공학과 | en_US |
dc.identifier.doi | 10.1063/1.3273862 | - |
dc.author.google | Lim, JA | en_US |
dc.author.google | Park, SH | en_US |
dc.author.google | Cho, JH | en_US |
dc.author.google | Lee, DR | en_US |
dc.author.google | Lee, JY | en_US |
dc.author.google | Cho, K | en_US |
dc.author.google | Lee, HS | en_US |
dc.author.google | Ko, YD | en_US |
dc.author.google | Baek, JH | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 23 | en_US |
dc.relation.startpage | 233509 | en_US |
dc.relation.lastpage | 233509 | en_US |
dc.contributor.id | 10077904 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.23, pp.233509 - 233509 | - |
dc.identifier.wosid | 000272627700114 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 233509 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 233509 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Cho, K | - |
dc.identifier.scopusid | 2-s2.0-71949115095 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 7 | - |
dc.description.scptc | 7 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ENERGY-LEVEL ALIGNMENT | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | POLYMER ELECTRODES | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | GROWTH | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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