Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors
SCIE
SCOPUS
- Title
- Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors
- Authors
- Lim, JA; Park, SH; Baek, JH; Ko, YD; Lee, HS; Cho, K; Lee, JY; Lee, DR; Cho, JH
- Date Issued
- 2009-12-07
- Publisher
- AMER INST PHYSICS
- Abstract
- We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (similar to 10(3) S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm(2)/Vs and an ON/OFF current ratio of 10(7) were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT: PSS electrodes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3273862]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9651
- DOI
- 10.1063/1.3273862
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 95, no. 23, page. 233509 - 233509, 2009-12-07
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