Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes
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- Title
- Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes
- Authors
- Hong, K; Kim, SH; Yang, C; Jang, J; Cha, H; Park, CE
- Date Issued
- 2010-09-06
- Publisher
- AMER INST PHYSICS
- Abstract
- We improved the device performance of N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm(2)/V s, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3488817]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9703
- DOI
- 10.1063/1.3488817
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 97, no. 10, page. 103304, 2010-09-06
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