DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jun Ho Son | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:25:37Z | - |
dc.date.available | 2015-06-25T01:25:37Z | - |
dc.date.created | 2011-04-11 | - |
dc.date.issued | 2010-07-19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000021496 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9705 | - |
dc.description.abstract | The effects of piezoelectric polarization on efficiency droop in InGaN/GaN light-emitting diodes (LEDs) have been investigated using numerical analysis. The simulation results showed that the severe band bending in InGaN quantum-well was improved as the piezoelectric polarization is reduced, resulting in the improved overlap of electron and hole wave functions. As a results, the internal quantum efficiency increases and efficiency droop significantly reduces. The reduction in piezoelectric polarization could be derived by applying a tensile stress to relax compressive stress in GaN epilayer, improving the efficiency droop of vertical-structure LEDs, agree well with simulation ones. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464976] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMERICAN INSTITUTE OF PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1063/1.3464976 | - |
dc.author.google | Son, JH | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 97 | en_US |
dc.relation.issue | 3 | en_US |
dc.relation.startpage | 32109 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.3, pp.32109 | - |
dc.identifier.wosid | 000280255800048 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 32109 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-77956212795 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 20 | - |
dc.description.scptc | 21 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordAuthor | bending | - |
dc.subject.keywordAuthor | compressive strength | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | internal stresses | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | piezoelectricity | - |
dc.subject.keywordAuthor | semiconductor quantum wells | - |
dc.subject.keywordAuthor | tensile strength | - |
dc.subject.keywordAuthor | wave functions | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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