Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
SCIE
SCOPUS
- Title
- Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
- Authors
- Jun Ho Son; Lee, JL
- Date Issued
- 2010-07-19
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Abstract
- The effects of piezoelectric polarization on efficiency droop in InGaN/GaN light-emitting diodes (LEDs) have been investigated using numerical analysis. The simulation results showed that the severe band bending in InGaN quantum-well was improved as the piezoelectric polarization is reduced, resulting in the improved overlap of electron and hole wave functions. As a results, the internal quantum efficiency increases and efficiency droop significantly reduces. The reduction in piezoelectric polarization could be derived by applying a tensile stress to relax compressive stress in GaN epilayer, improving the efficiency droop of vertical-structure LEDs, agree well with simulation ones. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464976]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9705
- DOI
- 10.1063/1.3464976
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 97, no. 3, page. 32109, 2010-07-19
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