DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwak, CH | - |
dc.contributor.author | Kim, BH | - |
dc.contributor.author | Park, CI | - |
dc.contributor.author | Seo, SY | - |
dc.contributor.author | Kim, SH | - |
dc.contributor.author | Han, SW | - |
dc.date.accessioned | 2015-06-25T01:25:52Z | - |
dc.date.available | 2015-06-25T01:25:52Z | - |
dc.date.created | 2010-05-11 | - |
dc.date.issued | 2010-02-01 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000021230 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9709 | - |
dc.description.abstract | Vertically-well-aligned ZnO nanorods were synthesized on Ti buffer layers by a metal-organic chemical-vapor deposition process. Structural analyses demonstrated that the ZnO nanorods were well-aligned in the c-axis and ab-plane. Transmission electron microscopy (TEM) showed that the Ti buffer layer was amorphous and interdiffused into the ZnO nanorods. Energy-dispersive spectroscopy (EDS) analysis revealed the Ti buffer layers to be slightly oxide. Extended x-ray absorption fine structure confirmed the TEM and EDS results. The I-V characteristic measurements showed a 20-fold increase in current density with the Ti buffer layer, suggesting excellent electrical contact between the Ti buffer layer and ZnO nanorods. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMERICAN INSTITUTE OF PYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Structural and Electrical Properties of ZnO Nanorods and Ti Buffer Layers | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3308498 | - |
dc.author.google | Kwak, CH | en_US |
dc.author.google | Kim, BH | en_US |
dc.author.google | Han, SW | en_US |
dc.author.google | Kim, SH | en_US |
dc.author.google | Seo, SY | en_US |
dc.author.google | Park, CI | en_US |
dc.relation.volume | 96 | en_US |
dc.relation.issue | 51908 | en_US |
dc.contributor.id | 10077433 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.96, no.51908 | - |
dc.identifier.wosid | 000274319500036 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 51908 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 96 | - |
dc.contributor.affiliatedAuthor | Kim, SH | - |
dc.identifier.scopusid | 2-s2.0-76449092779 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 5 | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | buffer layers | - |
dc.subject.keywordAuthor | current density | - |
dc.subject.keywordAuthor | electrical contacts | - |
dc.subject.keywordAuthor | EXAFS | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | titanium | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | X-ray chemical analysis | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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