DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo Jin Ha | - |
dc.contributor.author | Sameer Chhajed | - |
dc.contributor.author | Seung Jae Oh | - |
dc.contributor.author | Sunyong Hwang | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Ki-Se Kim | - |
dc.date.accessioned | 2015-06-25T01:29:04Z | - |
dc.date.available | 2015-06-25T01:29:04Z | - |
dc.date.created | 2012-03-29 | - |
dc.date.issued | 2012-03-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000025353 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9762 | - |
dc.description.abstract | The carrier transport mechanism of CF4 plasma-treated AlGaN/GaN Schottky barrier diodes (SBDs) under reverse bias is investigated. The reverse leakage current is reduced by similar to 2 orders of magnitude after the CF4 plasma treatment, but increases exponentially with increasing temperature, indicating that a thermally activated transport mechanism is involved. Based on the activation energy estimated from temperature-dependent current-voltage characteristics and the emission barrier height extracted from Frenkel-Poole emission model, it is suggested that the dominant carrier transport mechanism in the CF4 plasma treated SBDs is the Frenkel-Poole emission from fluorine-related deep-level states into the continuum states of dislocations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697684] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3697684 | - |
dc.author.google | Jin Ha W., Chhajed S., Jae Oh S., Hwang S., Kyu Kim J., Lee J.-H., Kim K.-S. | en_US |
dc.relation.volume | 100 | en_US |
dc.relation.issue | 13 | en_US |
dc.contributor.id | 10100864 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.100, no.13 | - |
dc.identifier.wosid | 000302230800031 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 13 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 100 | - |
dc.contributor.affiliatedAuthor | Kim, JK | - |
dc.identifier.scopusid | 2-s2.0-84859550636 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 26 | - |
dc.description.scptc | 21 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | POOLE-FRENKEL | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | MODE | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | FILMS | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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