Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma
SCIE
SCOPUS
- Title
- Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma
- Authors
- Woo Jin Ha; Sameer Chhajed; Seung Jae Oh; Sunyong Hwang; Kim, JK; Lee, JH; Ki-Se Kim
- Date Issued
- 2012-03-26
- Publisher
- AMER INST PHYSICS
- Abstract
- The carrier transport mechanism of CF4 plasma-treated AlGaN/GaN Schottky barrier diodes (SBDs) under reverse bias is investigated. The reverse leakage current is reduced by similar to 2 orders of magnitude after the CF4 plasma treatment, but increases exponentially with increasing temperature, indicating that a thermally activated transport mechanism is involved. Based on the activation energy estimated from temperature-dependent current-voltage characteristics and the emission barrier height extracted from Frenkel-Poole emission model, it is suggested that the dominant carrier transport mechanism in the CF4 plasma treated SBDs is the Frenkel-Poole emission from fluorine-related deep-level states into the continuum states of dislocations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697684]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9762
- DOI
- 10.1063/1.3697684
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 100, no. 13, 2012-03-26
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