Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties
SCIE
SCOPUS
- Title
- Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties
- Authors
- BAEK, CHANG KI; Seungho Lee; KIM, KIHYUN; Deok-Hong Kang; MEYYAPPAN, MEYYA
- Date Issued
- 2019-02
- Publisher
- American Chemical Society
- Abstract
- Thermoelectric modules based on silicon nanowires (Si-NI/Vs) have recently attracted significant attention as they show an improved thermoelectric efficiency due to a decrease in thermal conductivity. Here, we adopt a top-down fabrication method to dramatically reduce the thermal conductivity of vertical Si-NWs. The thermal conductivity of a vertical Si-NW is significantly suppressed with an increasing surface roughness, decreasing diameter, and increasing doping concentration. This large suppression is caused by enhanced phonon scattering, which depends on the phonon wavelength. The boron- and phosphorus-doped rough Si-NWs with a diameter of 200 nm and surface roughness of 6.88 nm show the lowest thermal conductivity of 10.1 and 14.8 W.m(-1).K-1, respectively, which are 5.1- and 3.6-fold lower than that of a smooth intrinsic nanowire and 14.8- and 10.1-fold lower than that of bulk silicon. A thermoelectric module was fabricated using this doped rough Si-NW array, and its thermoelectric performance is compared with previously reported Si-NW modules. The fabricated module exhibits an excellent performance with an open circuit voltage of 216.8 mV.cm(-2) and a maximum power of 3.74 mu W.cm(-2) under a temperature difference of 180 K, the highest reported for Si-NW thermoelectric modules.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/100284
- DOI
- 10.1021/acs.nanolett.8b03822
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- Nano Letters, vol. 19, no. 2, page. 747 - 755, 2019-02
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