Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells
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SCOPUS
- Title
- Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells
- Authors
- Kim, B; Kwon, WH; Baek, CK; Son, Y; Park, CK; Kim, K; Kim, DM
- Date Issued
- 2006-12
- Publisher
- IEEE
- Abstract
- The erase threshold-voltage (V-T) distribution in Flash electrically erasable programmable read-only memory cells was investigated versus the tunnel oxide edge profiles in self-aligned shallow trench isolation (SA-STI) and self-aligned poly (SAP) cells. The capacitive coupling with offset voltage correction is transcribed into V-T transient for simulating erase V-T dispersion without numerous full structure device simulations. It is shown that SAP gives rise to smaller V-T dispersion, compared with SA-STI. The V-T dispersion resulting from variations in dielectric thickness and oxide edge profiles is shown to fall far short of observed V-T distribution, calling for examination of additional process and cell parameters.
- Keywords
- capacitive coupling equation with offset voltage; edge profile effect; erase threshold voltage distribution; Flash electrically erasable programmable read-only memory (EEPROM) cell; FLUCTUATIONS; SIMULATION; MOSFETS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13712
- DOI
- 10.1109/TED.2006.885101
- ISSN
- 0018-9383
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53, no. 12, page. 3012 - 3019, 2006-12
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- There are no files associated with this item.
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